Our research focuses on the development of a cost-effective silicon (Si) optical sensor, that is highly
compatible with today’s industrial processes. The sensor covers a spectral range from visible (VIS) to
a short wave infrared spectral (SWIR) band (VIS+ SWIR, 300 nm to 1800 nm).

The main focus lies on the processes and materials of current commercially available dual-band
detectors, which are among the most important cost drivers in their manufacturing process. For
example, the use of multiple materials, including layered indium gallium arsenide (InGaAs) structures,
not only results in higher manufacturing costs or higher environmental load, but also in
incompatibility with CMOS processes or thermal mismatches and interfacial defects that can affect
performance and reliability. Furthermore, in order to cover the wavelength range between 300 nm
and 1800 nm, a combination of at least two different sensor types is typically required, such as Si
and InGaAs or Si-germanium (Ge)-based sensors. The hybrid sensors that combine Si and InGaAs
dominate the market for this wavelength range.

By leveraging silicon – a thoroughly studied material with decades of industrial use – and mature
semiconductor processes like ion implantation, rapid thermal processing, and lithography, we enable
a highly scalable, reliable, and compact solution for among others telecommunications, healthcare,
automatization in agriculture, consumer electronics and automotive. This silicon-based technology
presents a true alternative to hybrid solutions by simplifying system design, lowering production
costs, and improving environmental sustainability through standard, RoHS-compliant materials. Its
CMOS compatibility also allows seamless integration into photonic integrated circuits, a promising
platform for future communication and optical computing.